| 1. | The snam results of local stress distribution are in close agreement with the results of computer simulation
利用计算机模拟了温度场变化引起的铜互连线中热应力分布。 |
| 2. | The mechanical simulation compared the stress distribution in copper lines and pore , with the result that the maximum stress locates in the corner
在力学模拟过程中，计算了铜互连线和通孔的热应力的分布。 |
| 3. | Studies on the stress of copper interconnects include the stress measurement by xrd , computer simulation and observation the local stress distribution with snam
利用薄膜应力测试分布仪和xrd测量硅基铜膜及铜互连线薄膜宏观应力。 |
| 4. | On the other hand , tddb experiments of copper interconnection have been taken to prove the performance improvement of interconnect by the use of low - k dielectric
试验方面则进行了铜互连线的tddb试验，来验证低k介质对互连性能的改善。 |
| 5. | Studies on the microstructure of copper interconnects include the determination of grain size by afm and sem , the measurement of texture by xrd and ebsd , the evaluation of barriers by xps and aes
铜互连线的微观结构的研究：通过afm 、 sem 、 tem等的分析方法对铜膜及铜互连线薄膜的晶粒尺寸进行了评价。 |
| 6. | Xrd analysis results reveal the electroplated copper film has strong cu { 111 } texture and cu { 111 } texture weakens after annealed . the cu { 111 } texture of copper film in trenches is obviously weaker than that of the blanket copper film
在沉积态铜膜存在较强的铜{ 111 }织构，热处理以后铜膜的织构减弱，铜互连线沟槽中铜{ 111 }织构要弱于铜膜的铜{ 111 }织构。 |
| 7. | The results show the grain size becomes larger along with elevated temperature and the grain size in interconnects does not change evidently after annealed at 200 ? because of the effect of the trench structure
结果显示热处理后铜膜晶粒长大，但铜互连线薄膜由于沟槽结构对晶粒的长大有阻碍作用。利用xrd和ebsd测试方法对铜膜及铜互连线薄膜的织构进行评价。 |
| 8. | In this thesis , focusing on the copper diffusion failure of copper interconnects in the ulsi , such as electromigration , stressmigration and copper diffusing into silicon dioxide and silicon , the microstructure and the stress of copper interconnects in ulsi have been studied systemically
本论文从ulsi铜互连技术可靠性研究中的铜扩散失效问题出发，针对电徙动失效、应力迁移失效、层间扩散失效问题，对铜互连线的微观结构和应力进行了研究。 |
| 9. | Through the electromigration experiment , the electromigration resistance of copper interconnection with different width was compared , its mtf and activated energy was calculated , and the failure mechanism was explored . then , difference between copper interconnection and aluminum interconnection was studied
通过电徙动试验，研究比较了不同宽度的铜互连线的抗电迁徙能力，计算了其中值寿命和激活能，探讨了其失效机理，并与铝互连线进行了比较。 |
| 10. | The results indicate the stress of copper interconnects generates in the metallization and the thermal stress caused by thermal mismatch during the damascene process is the main stress . the thermal stress distribution in copper interconnects has been simulated by the finite element analysis software with the different trench structures
对测量结果的分析得出金属薄膜的淀积是造成铜互连线中应力的主要原因，热应力在铜互连线应力中占较大比例，热处理后铜互连线中应力减小。 |
