| 1. | Effect of temperature on structure and optical property of tio
温度条件对反应电子束蒸发制备tio |
| 2. | Azo is deposited by electronic beam evaporation on the k9 substrates
本文用电子束蒸发的方法在k9玻璃上制备了azo薄膜。 |
| 3. | 5 . the substances which have good optical properties are chosen as preparation
采用电子束蒸发的方法在k9光学玻璃上得到了光学性能良好的光学薄膜。 |
| 4. | The best annealing condition of the zno films grown by electron beam evaporation technique was achieved
采用电子束蒸发的方法在si衬底上生长zno薄膜，通过退火实验，得到了最佳的退火条件。 |
| 5. | In this paper , high quality transparent and conductive al - doped zno thin films on quartz substrates are prepared by electron beam evaporation technique
本文采用电子束蒸发方法在石英衬底上制备出质量较好的al掺杂的zno薄膜材料。 |
| 6. | Silicon films with high crystal quality and good electrical properties have been successfully grown on porous silicon substrate by ultra - vacuum electron beam evaporator
首次采用超高真空电子束蒸发的方法在多孔硅上成功地外延出晶体质量和电学性能良好的单晶硅。 |
| 7. | The main scattering mechanism is ionized impurity scattering and acoustical phonon scattering . the experimental results show that the high quality of zno . al films were obtained
实验结果表明利用电子束蒸发技术制备的zno ： al薄膜材料，具有较好的结构及光电特性。 |
| 8. | Tungsten oxide and nickel oxide films were prepared by electron beam evaporation method , and the effect of annealing techniques of the electrochromic properties of these films was discussed
本论文利用电子束蒸发方法制备氧化钨、氧化镍薄膜的基础上，研究了热处理工艺对于薄膜电致变色性能的影响。 |
| 9. | It is namely that the substrate temperature is about 250 , the deposit rate must be slower than 10 a / s and the film thickness must be selected according to the optical and electronic needs of the films
通过极差法确定了在电子束蒸发制备条件下得到的最佳光电性能的azo薄膜的工艺条件是：基片温度在250左右、沉积速率不大于10a s 。 |
| 10. | And the highly ( 100 ) oriented pt / tb films was successfully prepared , the orientation mechanism can be - bfeadened - to the appirea | i other oriented films pfe pt / tb thin films as raw materials , the single - crystal , ultra - long , uniform lead oxide nanowires were successfully prepared with new method
同时发现这种薄膜可通过高能量电子束蒸发的方法成功制备pbo单晶纳米线，这种方法可望被应用于其他氧化物单晶纳米线的制备。另外， mcnt的掺杂使pt薄膜结晶温度下降。 |
