English translation for "悬挂键"
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- dangling bonds
Related Translations:
悬挂索: pendant linependant wiresuspension line 悬挂按钮: pendant buttonpendant control switchpendant switch 悬挂于磁盘: std suspend to disk
- Example Sentences:
| 1. | Alternate type mounted reversible moldboard plough
悬挂键式双向铧式犁 | | 2. | But there are a lot of defects ( dangling band ) in amorphous silicon , therefore its application have been limited
但是由于它含有大量的缺陷态(主要缺陷态是悬挂键) ，使其在实际应用方面受到了约束。 | | 3. | Dangling bonds exist at the surface of porous silicon , which leads to the drop of the light - emitting efficiency . to apply porous silicon into practice , surface modification is necessary
多孔硅表面存在大量的悬挂键，容易引起发光效率的降低，行之有效的克服方法是进行表面修饰。 | | 4. | This decrease in the defect pl intensity is probably caused by the increase of the nonradiative tunneling transition with multiphonon emission because of the increase in the density of si dbs
缺陷pl强度的减小可能是因为随着sidbs密度的增加，与多声子有关的，从导带到悬挂键的非辐射通道迁移的增加而引起的。 | | 5. | We can lessen the dangling bonds and bug in order to improve the ion / ioff 、 vth by hydrogenation . in general , hydrogenation is prepared after completing of tft , in this way , we need more radio frequency power and time , so the cost of hydrogenation will raise
而通过氢化可以大大降低多晶硅薄膜晶粒边界中的悬挂键和界面陷阱,从而显著提高tft的场效应迁移率和开态电流,减少关态电流,提高tft的电学性能。 | | 6. | At the same time , we experimented by varying substrate temperature , and found that high substrate temperature is favorable to hydrogen elimination and thus improve the structure of films , but over high substrate temperature leads to the increase of dangling bonds
同时，我们研究了衬底温度对a - si ： h结构的影响，发现高衬底温度有利于沉积过程中的释氢反应，从而改善薄膜的结构，但过高的衬底温度将导致悬挂键的增多。 | | 7. | In each case , we present the surface band structure together with the projected bulk band of both ideal and reconstruction surface respectively , the number of the surface states is determined , and the localized surface features and orbital properties of this surface states along the high symmetry lines in the 2d sbz are discussed
根据电子数目规则，我们断定处在一o . lev ~ 0 . lev的表面态为全部填满的阴离子悬挂键态或者为原子再构后引起的as一asdimer键态，而处在1 . 4ev一1 . 6ev的表面态为阳离子空的悬挂键态。 | | 8. | The photoelectric property of a - si : h films is closely associated with hydrogen content in films . on the one hand , hydrogen incorporated as monohydride ( si - h ) saturates dangling bonds in films , and on the other hand , hydrogen incorporated as polyhydride ( si - h2 , si - h3 , ( si - h2 ) n ) introduces defect in films and thus increases the density of localized electronic states in band gap
A - si ： h薄膜的光电特性同膜中的氢存在密切关系，一方面，氢以单氢化合物( si - h )方式结合到膜中，从而饱和了膜中的悬挂键；另一方面，氢以多氢化合物( si - h2 、 si - h3和( si - h2 ) n )方式结合到膜中，反而在膜中引入了缺陷，使带隙中的局域态密度增大。 |
- Similar Words：
- "悬挂加工件" English translation, "悬挂架" English translation, "悬挂架销钉" English translation, "悬挂架移动" English translation, "悬挂减震器" English translation, "悬挂键式双向铧式犁" English translation, "悬挂脚手架" English translation, "悬挂绞车" English translation, "悬挂接头" English translation, "悬挂接头选择开关" English translation
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