| 1. | The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using .
再略为详细地讨论液相外延生长过程，因为晶体生长是实现集成光路使用的必不可少的一个环节。 |
| 2. | Liquid phase epitaxial growth technique
液相外延生长技术 |
| 3. | Semiconductor superlattice distributed bragg reflector grown by molecular beam epitaxy
的分子束外延生长 |
| 4. | Monte carlo simulation of epitaxial growth on semiconductor film material
半导体薄膜材料外延生长的蒙特卡罗模拟 |
| 5. | Vapor phase epitaxial growth
汽相外延生长 |
| 6. | Epitaxial growth process
外延生长过程 |
| 7. | Vapor growth epitaxy
汽相外延生长 |
| 8. | Interdiffusion of si and ge atoms during epitaxy growth of ge layer on si studied by raman spectroscopy
分子束外延生长高应变单量子阱激光器 |
| 9. | Testing of semi - conductive inorganic materials ; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
半导体无机材料的试验.用红外线干涉法测量硅外延生长 |
| 10. | The major results are summariaed as follows : i . an investigations of magnetic properties in epitaxial single crystalline fe ultathin films . 1
主要结果如下：一、半导体衬底上外延生长fe单晶超薄膜的磁性的研究1 |
