| 1. | The common emitter configuration is by far the most versatile and widely used .
目前共发射极接法用途最多，应用最广。 |
| 2. | We shall take the typical emitter-to-base resistance as about 250 ohms .
我们取发射极基极电阻的典型值为250欧姆左右。 |
| 3. | The base region is always very much narrower than the emitter or collector regions .
基极总是比发射极和集电极薄得多。 |
| 4. | We have been considering the transistor with a current fed into the emitter .
我们所研究的晶体管都是把电流馈入发射极。 |
| 5. | The density of holes in the base is less than the density of free electrons in the emitter and collector .
基极中空穴的密度小于发射极和集电极中自由电子的密度。 |
| 6. | Features : low vce ( sat ) , large current capacity
特点:集电极-发射极饱和压降低,电流大。 |
| 7. | The etch of polysilicon emitter bipolar technology
技术中多晶发射极的腐蚀 |
| 8. | Common - base collector emitter connection
共基极集电极发射极连接 |
| 9. | Bet balanced - emitter transister
平衡发射极晶体管 |
| 10. | Emitter crowding effect
发射极集边拥挤效应 |
